This paper presents an integrated power electronics module with a vapor chamber (VC) acting as a heat spreader to transfer the heat from the insulated gate bipolar transistor (IGBT) module to the base of the heat-sink. A vapor chamber consists of a copper enclosure. This document describes the characterization of vapor chambers as cooling devices for multiple chip modules. It includes developing and building the testing system, selecting the control and monitoring parameters, designing the vapor. This work presents a demonstration of a coefficient of thermal expansion (CTE) matched, high heat flux vapor chamber directly integrated onto the backside of a direct bond copper (DBC) substrate to improve heat spreading and reduce thermal resistance of power electronics modules.